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Preliminary Datasheet
HAT2244WP
Silicon N Channel Power MOS FET Power Switching
Features
Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 10 m typ. (at VGS = 10 V) REJ03G1549-0410 Rev.4.10 May 13, 2010
Outline
RENESAS Package code: PWSN0008DA-A (Package name: WPAK)
5678 DDDD
5678
4 G
4 321
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
SSS 123
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 80 20 30 120 30 25 83 25 5 150 -55 to +150 Unit V V A A A A mJ W C/W C C
REJ03G1549-0410 Rev.4.10 May 13, 2010
Page 1 of 7
HAT2244WP
Preliminary
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 80 -- -- 0.8 -- -- 42 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 10 11.5 70 3520 410 160 1.2 60 9.5 9.0 9.5 14.5 56 9.5 0.83 50 Max -- 0.5 1 2.3 12.5 15.5 -- -- -- -- -- -- -- -- -- -- -- -- 1.08 -- Unit V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = 20 V, VDS = 0 VDS = 80 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 15 A, VGS = 10 V Note4 ID = 15 A, VGS = 4.5 V Note4 ID = 15 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 25 V VGS = 10 V ID = 30 A VGS = 10 V, ID = 15 A VDD 30 V RL = 2 Rg = 4.7 IF = 30 A, VGS = 0 Note4 IF = 30 A, VGS = 0 diF/ dt = 100 A/ s
REJ03G1549-0410 Rev.4.10 May 13, 2010
Page 2 of 7
HAT2244WP
Preliminary
Main Characteristics
Power vs. Temperature Derating
40 1000 10 s
Maximum Safe Operation Area
Pch (W)
Drain Current ID (A)
100
1 m s
30
10
0
s
Channel Dissipation
10 Operation in this area is limited by RDS(on)
20
1
10
0.1
DC Operation Tc=25C
PW = 10 ms
0
50
100
150
200
Ta = 25C 0.01 1 shot Pulse 0.1 0.3 1 3 10 30 100 300 1000
Case Temperature Tc (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
50 3.1 V 10 V 50
Typical Transfer Characteristics
VDS = 10 V Pulse Test
Drain Current ID (A)
30 2.7 V
Drain Current ID (A)
40
2.9 V
40
30 Tc = 75C
20
20
10
VGS = 2.5 V
Pulse Test
10
25C -25C
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
Gate to Source Voltage VGS (V) Static Drain to Source On State Resistance vs. Drain Current
100 Pulse Test 50
250
Pulse Test
200
Static Drain to Source On State Resistance RDS(on) (m)
Drain to Source Voltage VDS(on) (mV)
20 VGS = 4.5 V 10 10 V 5
150 ID = 10 A 100 5A 2A 0 5 10 15 20
50
2 1 1 10 100
Gate to Source Voltage VGS (V)
Drain Current ID (A)
REJ03G1549-0410 Rev.4.10 May 13, 2010
Page 3 of 7
HAT2244WP
Static Drain to Source On State Resistance vs. Temperature
50 Pulse Test 40
Preliminary
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance |yfs| (S)
1000
Static Drain to Source On State Resistance RDS(on) (m)
100
30
Tc = -25C
1 A, 2 A, 5 A
20 VGS = 4.5 V 10 10 V 0 -25 0 25 50 75 100 125 150 ID = 1 A, 2 A, 5 A
25C 10 75C VDS = 10 V Pulse Test 0.3 1 3 10 30 100
1 0.1
Case Temperature Tc (C)
Drain Current ID (A)
Body-Drain Diode Reverse Recovery Time
100 10000
Typical Capacitance vs. Drain to Source Voltage
Reverse Recovery Time trr (ns)
Ciss 50
Capacitance C (pF)
3000 1000 300 100 Crss 30 10 VGS = 0 f = 1 MHz 0 10 20 30 40 50 Coss
20 di/dt = 100 A/s VGS = 0, Ta = 25C 1 10 100
10 0.1
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V)
100 ID = 30 A 80 VDS = 50 V 25 V 10 V VDS 40 VGS 16 20
Switching Characteristics
Gate to Source Voltage VGS (V)
1000 VGS = 10 V, VDS = 30 V Rg = 4.7 , duty 1 %
Switching Time t (ns)
100 tf 10 td(on) tr 1 0.1
60
12
td(off)
8
20
VDS = 50 V 25 V 10 V 20 40 60 80
4 0 100
0
1
10
100
Gate Charge Qg (nc)
Drain Current ID (A)
REJ03G1549-0410 Rev.4.10 May 13, 2010
Page 4 of 7
HAT2244WP
Reverse Drain Current vs. Source to Drain Voltage
50
Preliminary
Maximum Avalanche Energy vs. Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
100 IAP = 25 A VDD = 50 V duty < 0.1 % Rg 50
Reverse Drain Current IF (A)
40
80
30
10 V VGS = 0 V, -5 V
60
20
40
10 Pulse Test 0 0.4 0.8 1.2 1.6 2.0
20 0 25
50
75
100
125
150
Source to Drain Voltage VSDF (V)
Channel Temperature Tch (C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
10
1
D=1 0.5
0.2 0.1
Tc = 25C
0.1
0.05
0.02
0.01
0.01
1s
ho
t
ls pu
e
ch - c(t) = s (t) * ch - c ch - c = 5C/ W, Tc = 25C
PDM
0.001
PW T
D=
PW T
0.0001 10
100
1m
10 m
100 m
1
10
Pulse Width PW (s)
REJ03G1549-0410 Rev.4.10 May 13, 2010
Page 5 of 7
HAT2244WP
Avalanche Test Circuit Avalanche Waveform
EAR = 1 2 L * IAP2 * VDSS
Preliminary
V DS Monitor
L I AP Monitor
VDSS - V DD
V (BR)DSS I AP VDD ID V DS
Rg Vin 15 V
D. U. T
50 0 VDD
Switching Time Test Circuit
Vin Monitor Rg D.U.T. RL V DS = 30 V td(on) Vout Monitor Vin Vout Vin 10 V
Switching Time Waveform
90% 10% 10% 90% tr 90% td(off) tf 10%
REJ03G1549-0410 Rev.4.10 May 13, 2010
Page 6 of 7
HAT2244WP
Preliminary
Package Dimensions
Package Name WPAK JEITA Package Code RENESAS Code PWSN0008DA-A Previous Code WPAKV MASS[Typ.] 0.075g
Unit: mm
0.5 0.15
4.21Typ 1.27Typ
5.1 0.2
0.8Max
3.9 0.2
6.1
5.9
0.04Min
0.7Typ
0.545Typ
1.27Typ
0.2Typ
0.5 0.15
3.8 0.2
+0.1 -0.3
+0.1 -0.2
0.4 0.06
0.05Max 0Min Stand-off
4.9 0.1
(Ni/Pd/Au plating) Notice:The reverse pattern of die-pad support lead described above exists.
Ordering Information
Part No. HAT2244WP-EL-E Quantity 2500pcs Taping Shipping Container
REJ03G1549-0410 Rev.4.10 May 13, 2010
Page 7 of 7
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